0(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices
Nexperia Germany GmbH | Germany | 22xxx, 21xxx, 81xxx, 20xxx, 80xxx, Großbritannien Manchester, Hamburg, München | Permanent position | Full time | Published since: 25.06.2026 on stepstone.de

(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Branch: Electrical engineering Branch: Electrical engineering


Nexperia is a world-class company in semiconductor development and in-house production. A proven global player with an entrepreneurial mentality. At our core is an 12,000+ strong international network with a singular focus. Built on passion and commitment to work, delivered in our goals and a drive to fail of the challenges we face. We support, reward and challenge individuals equally, in a dynamic and energetic environment. Looking to push boundaries in a company where your talents can shine? Join TeamNexperia. Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions. Talent acquisition based on Nexperia vacancies is not appreciated. .

Your tasks • Your profile • What we offer

About the RoleJoin Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions. What You Will Do Lead device architecture definition and optimization for GaN technologies Own performance and balance trade-offs across performance, reliability, and manufacturability Drive TCAD simulation, modeling, and design to support technology and product development Collaborate with cross-functional teams across process, characterization, reliability and product Support industrialization by delivering robust, scalable device concepts

Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field Proven experience in GaN or wide bandgap device development Strong expertise in device physics, TCAD simulation, and semiconductor design Track record of leading complex, multidisciplinary technical projects Analytical, self-driven, and collaborative mindset in an international environment

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because various teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a work environment and reasonable adjustments where safe requested. In addition, we offer our colleagues the possibility to join employee resource groups search as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management position to 30% by 2030. .

Location

ava Nexperia Germany GmbH
Putzbrunner Str 71, 81739  Manchester, Hamburg, München
Germany

The text of this ad was translated from German into English using an automatic translation system and may contain semantic and lexical errors. Therefore, it should be used for introductory purposes only. For more detailed information, see the original text of the ad at the link below.

For more information read the original ad

Permanent link to this ad

Ad Id